JPS621261B2 - - Google Patents

Info

Publication number
JPS621261B2
JPS621261B2 JP54074379A JP7437979A JPS621261B2 JP S621261 B2 JPS621261 B2 JP S621261B2 JP 54074379 A JP54074379 A JP 54074379A JP 7437979 A JP7437979 A JP 7437979A JP S621261 B2 JPS621261 B2 JP S621261B2
Authority
JP
Japan
Prior art keywords
layer
region
type
base
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54074379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55166957A (en
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7437979A priority Critical patent/JPS55166957A/ja
Publication of JPS55166957A publication Critical patent/JPS55166957A/ja
Publication of JPS621261B2 publication Critical patent/JPS621261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
JP7437979A 1979-06-13 1979-06-13 Planar type thyristor Granted JPS55166957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7437979A JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7437979A JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Publications (2)

Publication Number Publication Date
JPS55166957A JPS55166957A (en) 1980-12-26
JPS621261B2 true JPS621261B2 (en]) 1987-01-12

Family

ID=13545467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7437979A Granted JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Country Status (1)

Country Link
JP (1) JPS55166957A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104045A (en) * 1998-05-13 2000-08-15 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
CN102096037B (zh) * 2010-12-16 2013-01-30 许继集团有限公司 一种晶闸管高压处理板的测试系统与方法
FR2991504A1 (fr) * 2012-05-30 2013-12-06 St Microelectronics Tours Sas Composant de puissance vertical haute tension

Also Published As

Publication number Publication date
JPS55166957A (en) 1980-12-26

Similar Documents

Publication Publication Date Title
US9876004B2 (en) Semiconductor component including a short-circuit structure
US6025622A (en) Conductivity modulated MOSFET
KR102204272B1 (ko) 게이트 트렌치들 및 매립된 종단 구조체들을 갖는 전력 반도체 디바이스들 및 관련 방법들
US6091086A (en) Reverse blocking IGBT
US4514747A (en) Field controlled thyristor with double-diffused source region
KR101252628B1 (ko) 저주파 및 고주파 애플리케이션을 위한 안정한 다이오드
JPH0734479B2 (ja) 半導体デバイス
US8878237B2 (en) Active edge structures providing uniform current flow in insulated gate turn-off thyristors
JP3895402B2 (ja) 半導体デバイス
JPS6339109B2 (en])
US3532945A (en) Semiconductor devices having a low capacitance junction
US4936928A (en) Semiconductor device
JP4108762B2 (ja) 電界効果により制御可能の半導体デバイス
US4975751A (en) High breakdown active device structure with low series resistance
US5286984A (en) Conductivity modulated MOSFET
US10707300B2 (en) Semiconductor device
US4236169A (en) Thyristor device
US4032957A (en) Semiconductor device
US4027324A (en) Bidirectional transistor
US5504351A (en) Insulated gate semiconductor device
US4868921A (en) High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
JPS5921170B2 (ja) Ｍｏｓ型半導体装置
JPS621261B2 (en])
WO2021145079A1 (ja) 半導体装置
JPS6239547B2 (en])